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Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approache
[期刊论文] 作者：Yuwei Cai,Zhaohao Zhang,Qingzhu Zhang,Jinjuan Xiang,Gaobo Xu,Zhenhua Wu,Jie Gu,Huaxiang Yin,
来源：半导体学报（英文版） 年份：2021
The HfO2-based ferroelectric field effect transistors(FeFET)have been widely studied for their ability in breaking the Boltzmann limit and the potential to be applied to low-power circuits.This article systematically investigates the transi......
[期刊论文] 作者：Guoliang TIAN,Jinshun BI,Gaobo XU,Kai XI,Xueqin YANG,Majumdar SANDIP,Huaxiang YIN,Qiuxia XU,Wenwu WANG,
来源：中国科学：信息科学（英文版） 年份：2020
Dear editor,rnFerroelectric tunneling FETs(FeTFETs)are the increasingly significant research topics on novel low-power electronic devices[1,2],because ferro-ele...
[会议论文] 作者：Chao Zhao,Tianchun Ye,Huilong Zhu,Huaxiang Yin,Jun Luo,Hong Yang,Chunlong Li,Tao Yang,Hushan Cui,Jianfeng,
来源：2015 Shanghai Thin Film Conference(2015上海薄膜国际会议) 年份：2015
In this talk,processing challenges of CMOS integration of FinFETs with all-last gate stacks and solutions by using novel materials are presented.It is found tha...
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