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Influence of crystal structure and formation energies of impurities (Mg,Zn and Ca) in zinc blende Ga
[期刊论文] 作者：XIONG Zhi-hua,JIANG Feng-yi,WA,
来源：中国有色金属学会会刊（英文版） 年份：2004
First-principles calculations on neutral metal impurities (Mg,Zn and Ca) in zinc blende GaN were studied. Formation energies were calculated for substitution on...
[期刊论文] 作者：ZHOU Sheng-Qiang,WU Ming-Fang,YAO Shu-De,WANG Li,JIANG Feng-Yi,
来源：中国物理快报（英文版） 年份：2006
Epitaxial ZnO films are grown on Al2O3 (0001) by the MOCVD method. These films are high quality wurtzite crystals with (0001) orientation. Big hexagonal crystal...
,Stress Distribution in GaN Films grown on Patterned Si (111) Substrates and Its Effect on LED Perfo
[期刊论文] 作者：CHEN Dan-Yang,WANG Li,XIONG Chuan-Bing,ZHENG Chang-Da,MO Chun-Lan,JIANG Feng-Yi,
来源：中国物理快报（英文版） 年份：2013
Crack free GaN films were grown on 1200× 1200μm2 patteed Si (111) substrates and 36 light emitting diodes (LEDs) were fabricated in each patte unit.Spatial di...
[期刊论文] 作者：ZHANG Jian-Li,LIU Jun-Lin,PU Yong,FANG Wen-Qing,ZHANG Meng,JIANG Feng-Yi,
来源：中国物理快报（英文版） 年份：2014
GaN epitaxial layers were grown on Si (111) substrates by metal organic chemical vapor deposition.Carbon concentrations in the films grown in different ambients...
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