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[会议论文] 作者：Jared J.Hou,Fengyun Wang,Ning Han,SenPo Yip,Fei Xiu,Johnny C.Ho,
来源：International Conference on Nanoscience & Technology,China 2 年份：2013
Ternary InGaAs nanowires have recently attracted extensive attention due to their superior electron mobility as well as the ability to tune the band gap for technological applications ranging from hig...
[会议论文] 作者：Ning Han,Fengyun Wang,Jared J.Hou,SenPo Yip,Hao Lin,Fei Xiu,TakFu Hung,Johnny C.Ho,
来源：IUPAC 9th International Conference on Novel Materials and th 年份：2013
In the past decade, Ⅲ-Ⅴ semiconductor nanowire (NW) materials such as InAs, InP,and InGaAs have attracted enormous research attentions due to their superior physical properties for next-generation ele...
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