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[期刊论文] 作者:Zhou Jian-Jun(周建军),Jiang Ruo-Lian(江若琏),Sha Jin(沙金),Liu Jie(刘杰),Shen Bo(沈波),Zhang Rong(张荣),Zheng You-Dou, 来源:中国物理(英文版) 年份:2003
GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal-semiconductor-metal photoconductive detectors were fabricated...
[期刊论文] 作者:WEN Bo(文博),JIANG Ruo-Lian(江若琏),ZHOU Jian-Jun(周建军),JI Xiao-Li(姬小利),LIANG Ling-Yan(梁凌燕),KONG Yue-Chan(孔月婵, 来源:中国物理快报(英文版) 年份:2004
The unintentionally doped samples of Al0.22 Ga0. 78N/GaN/Al0.22 Ga0. 78N/GaN multi-heterostructures have been designed and fabricated. The polarization induced...
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