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Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by p
[期刊论文] 作者:Jin-Jin Tang,Gui-Peng Liu,Jia-Yu Song,Gui-Juan Zhao,Jian-Hong Yang,
来源:中国物理B(英文版) 年份:2021
Gallium nitride(GaN)-based high electron mobility transistors(HEMTs)that work in aerospace are exposed to parti-cles radiation,which can cause the degradation i...
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