搜索筛选:
搜索耗时1.9248秒,为你在为你在102,285,761篇论文里面共找到 1 篇相符的论文内容
发布年度:
Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by p
[期刊论文] 作者：Jin-Jin Tang,Gui-Peng Liu,Jia-Yu Song,Gui-Juan Zhao,Jian-Hong Yang,
来源：中国物理B（英文版） 年份：2021
Gallium nitride(GaN)-based high electron mobility transistors(HEMTs)that work in aerospace are exposed to parti-cles radiation,which can cause the degradation i...
相关搜索：
