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A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between stati
[期刊论文] 作者：JongwoonYoon,KwangsooKim,
来源：JournalofSemiconductors 年份：2021
A split gate MOSFET (SG-MOSFET) is widely known for reducing the reverse transfer capacitance (CRSS). In a 3.3 kV class, the SG-MOSFET does not provide reliable operation due to the high gate oxide electric field. In addition to the poor...
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