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[会议论文] 作者：Le Wang,Kui-juan Jin,Jun-xing Gu,Chao Ma,Xu He,Jiandi Zhang,Can Wang,Yu Feng,Qian Wan,Jin-an Shi,Lin,
来源：2015 Shanghai Thin Film Conference(2015上海薄膜国际会议) 年份：2015
Ferroelectric random access memory is still challenging in the feature of combination of room temperature stability,non-destructive readout and high intensity storage.As a non-contact and non-destruct...
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