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,A Substitution for the High-κ Dielectric in an AIGaN/GaN Metal-insulator-Semiconductor Heterostruct
[期刊论文] 作者：KONG Yue-Chan,XUE Fang-Shi,ZHOU Jian-Jun,LI Liang,CHEN Chen,JIANG Wen-Hai,
来源：中国物理快报（英文版） 年份：2012
Paraelectric state ferroelectric material is proposed as a novel substitution for the conventional high-k dielectric used in AIGaN/GaN metal-insulator-semicondu...
[期刊论文] 作者：WEN Bo(文博),JIANG Ruo-Lian(江若琏),ZHOU Jian-Jun(周建军),JI Xiao-Li(姬小利),LIANG Ling-Yan(梁凌燕),KONG Yue-Chan(孔月婵,
来源：中国物理快报（英文版） 年份：2004
The unintentionally doped samples of Al0.22 Ga0. 78N/GaN/Al0.22 Ga0. 78N/GaN multi-heterostructures have been designed and fabricated. The polarization induced...
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