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[期刊论文] 作者:YidingLin,KwangHongLee,ShuyuBao,XinGuo,HongWang,JurgenMichel,ChuanSengTan, 来源:PhotonicsResearch 年份:2017
In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator (GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer,......
[期刊论文] 作者:YidingLin,KwangHongLee,ShuyuBao,XinGuo,HongWang,JurgenMichel,ChuanSengTan, 来源:PhotonicsResearch 年份:2018
This publisher’s note reports corrections to Eq. (1) in [Photon. Res.5, 702 (2017)PRHEIZ2327-9125...
[期刊论文] 作者:YidingLin,DanhaoMa,KwangHongLee,Rui-TaoWen,GovindoSyaranamual,LionelC.Kimerling,ChuanSengTan,JurgenMichel, 来源:PhotonicsResearch 年份:2021
Mechanical strain engineering has been promising for many integrated photonic applications. However, for the engineering of a material electronic bandgap, a trade-off exists between the strain uniformity and the integration compatibility wi......
[期刊论文] 作者:YipingZhang,HilmiVolkanDemir,JurgenMichel,KennethEngKianLee,SoonFattYoon,EugeneA.Fitzgerald,ChuanSengTan,KwangHongLee, 来源:PhotonicsResearch 年份:2018
High-performance GaInP/AlGaInP multi-quantum well light-emitting diodes (LEDs) grown on a low threading dislocation density (TDD) germanium-on-insulator (GOI) substrate have been demonstrated. The low TDD of the GOI substrate is realized th......
[期刊论文] 作者:BingWang,WardhanaAjiSasangka,KennethEngKianLee,SooJinChua,JurgenMichel,EugeneFitzgerald,ChuanSengTan,KwangHongLee, 来源:JournalofSemiconductors 年份:2021
The heterogeneous integration of III–V devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and optical systems for novel applications, such as HEMT or LED with integrated control circui......
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