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[期刊论文] 作者：Kyuhyun Cha,Kwangsoo Kim,
来源：半导体学报：英文版 年份：2021
In this paper,a 4 H-Si C DMOSFET with a source-contacted dummy gate(DG-MOSFET)is proposed and analyzed through Sentaurus TCAD and PSIM simulations.The source-contacted MOS structure forms fewer depletion regions than the PN junction.Therefo......
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