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,Impact of Au Nanocrystal Size and Inter-Nanocrystal Distance on the Storage Characteristics of Memo
[期刊论文] 作者：LAN Xue-Xin,OU Xin,XU Bo,GONG Chang-Jie,LI Run,YIN Qiao-Nan,XIA Yi-Dong,
来源：中国物理快报（英文版） 年份：2013
The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals (NCs) sandwiched by Al2O3 tunneling and block...
[期刊论文] 作者：LU Jian-Xin,OU Xin,LAN Xue-Xin,CAO Zheng-Yi,LIU Xiao-Jie,LU Wei,GONG Chang-Jie,
来源：中国物理快报（英文版） 年份：2014
A memory device Si/Al2 O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and rf-magnetron sputtering techniques.The memory device including...
[期刊论文] 作者：LI Run,TANG Shi-Yu,BAI Gang,YIN Qiao-Nan,LAN Xue-Xin,XIA Yi-Dong,YIN Jiang,
来源：中国物理快报（英文版） 年份：2013
GeTe4 films are deposited by using a dc magnetron sputtering technique,and its structural,thermal and electrical properties are investigated systematically.The...
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