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[期刊论文] 作者:CHEN Meng WANG Xi LIN Cheng-Lu, 来源:核技术:英文版 年份:2005
In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI (SGOI)material, an ideal substrate for realizing strained-silicon...
[期刊论文] 作者:WU Yan-jun,ZHANG Miao,ZHANG Ning-lin,LIN Cheng-lu, 来源:核技术(英文版) 年份:2003
Al precipitates as well as cavities (or open-volume detects) are known for their ability to getter impuri-ties within Si. In order to compare their relative get...
[期刊论文] 作者:DING Yan-Fang,ZHU Ming,ZHU Zi-Qiang,LIN Cheng-Lu, 来源:核技术(英文版) 年份:2006
Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advantages but it is inevitable that the buried silicon dioxide laye...
[期刊论文] 作者:MEN Chuan-ling,XU Zheng,AN Zheng-hua,XIE Xin-yun,LIN Cheng-lu, 来源:城市道桥与防洪 年份:2002
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者:SONG Hua-Qing,SHI Jing,ZHANG Miao,LIN Qing,LIN Cheng-Lu, 来源:中国物理快报(英文版) 年份:2003
Single crystalline silicon films are transferred on to a glass substrate by the smart-cut technique, which is based on H+ ions implantation, anodic bonding and...
[期刊论文] 作者:LIN Qing,ZHANG Zheng-Xuan,ZHU Ming,XIE Xin-Yun,SONG Hua-Qing,LIN Cheng-Lu, 来源:中国物理快报(英文版) 年份:2003
A new silicon-on-insulator (SOI) device structure is proposed. This new design provides a new path to reduce the temperature of the channel of SOI metal-oxide-s...
[期刊论文] 作者:LIU Xu-Yan,LIU Wei-Li,MA Xiao-Bo,CHEN Chao,SONG Zhi-Tang,LIN Cheng-Lu, 来源:中国物理快报(英文版) 年份:2009
[期刊论文] 作者:CHEN Chao,LIU Wei-Li,MA Xiao-Bo,SHEN Qin-Wo,SONG Zhi-Tang,LIN Cheng-Lu, 来源:中国物理快报(英文版) 年份:2008
Highly arsenic-doped Si-on-insulator(SOI) substrate incorporated with buried MoSi2 layers js fabricated aiming at decreasing the collector series resistance of...
[期刊论文] 作者:XIE Xin-yun,LIU Wei-li,AN Zheng-hua,LIN Qing,SHEN Qin-wo,ZHANG Miao,LIN Cheng-lu, 来源:城市道桥与防洪 年份:2002
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者:WAN Qing(万青),WANG Tai-Hong(王太宏),LIN Cheng-Lu(林成鲁), 来源:中国物理快报(英文版) 年份:2003
Vacuum electron-beam evaporated iron nanocrystal is used for the growth of carbon nanotubes. Atomic force microscopy and Raman scattering studies reveal the for...
[期刊论文] 作者:LIU Wei-Li,DUO Xin-Zhong,WANG Lian-Wei,ZHANG Miao,SHEN Qin-Wo,LIN Cheng-Lu,Paul K. Chu, 来源:中国物理快报(英文版) 年份:2001
Epitaxial monocrystalline Si was grown on porous silicon by ultra-high vacuum electron beam evaporation.Results of reflection high-energy electron diffraction,...
[期刊论文] 作者:ZHU Ming(朱鸣),LIN Qing(林青),ZHANG Zheng-Xuan(张正选),LIN Cheng-Lu(林成鲁), 来源:中国物理快报(英文版) 年份:2003
Considering that the silicon-on-insulator (SOI) devices have an inherent floating body effect, which may cause substantial influences in the performance of SOI...
[期刊论文] 作者:ZHANG Ning-Lin(章宁琳),SONG Zhi-Tang(宋志棠),SHEN Qin-Wo(沈勤我),LIN Cheng-Lu(林成鲁), 来源:中国物理快报(英文版) 年份:2003
Amorphous zirconia thin films were deposited directly on silicon-on-insulator (SOI) substrates with thin top silicon by ultra-high vacuum electron beam evaporat...
[期刊论文] 作者:Zhang En-Xia,Qian Cong,Zhang Zheng-Xuan,Lin Cheng-Lu,Wang Xi,Wang Ying-Min,Wang Xiao-He,Zhao Gui-Ru,En, 来源:中国物理(英文版) 年份:2006
The hardening of the buried oxide (BOX) layer of separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation was inv...
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