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[期刊论文] 作者：Ji Feng,Xu Jing-Ping,Lai Pui-To,
来源：中国物理（英文版） 年份：2007
In this paper, a threshold voltage model for high-κgate-dielectric metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed, with more accurat...
,Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene
[期刊论文] 作者：Xu Jing-Ping,Chen Wei-Bing,Lai Pui-To,Li Yan-Ping,Chan Chu-Lok,
来源：中国物理（英文版） 年份：2007
Trichloroethylene (TCE) pretreatment of Si surface prior to HfO2 deposition is employed to fabricate HfO2 gatedielectric MOS capacitors. Influence of this proce...
,Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k di
[期刊论文] 作者：Zhang Xue-Feng,Xu Jing-Ping,Lai Pui-To,Li Chun-Xia,Guan Jian-Guo,
来源：中国物理B（英文版） 年份：2007
A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 g...
[期刊论文] 作者：Chen Wei-Bing,Xu Jing-Ping,Lai Pui-To,Li Yan-Ping,Xu Sheng-Guo,Chan Chu-Lok,
来源：中国物理（英文版） 年份：2006
The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets in an Ar/O2 ambience, followed by an annealing in different...
,Improving the performance of polymer solar cells by adjusting the crystallinity and nanoscale phase
[期刊论文] 作者：Chen Wei-Bing,Xu Zong-Xiang,Li Kai,Chui Stephen Sin-Yin,Roy V.A.L.,Lai Pui-To,Che Chi-Ming,
来源：中国物理B（英文版） 年份：2012
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