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[期刊论文] 作者:Shu-Xing Zhou,Ming Qi,Li-Kun Ai,An-Huai Xu, 来源:中国物理B(英文版) 年份:2016
[期刊论文] 作者:Jia-Kai Li,Li-Kun Ai,Ming Qi,An-Hui Xu,Shu-Min Wang, 来源:中国物理B(英文版) 年份:2018
The effects of Bi flux and pressure of AsH3 on Bi incorporation, surface morphology and optical properties of In-GaAsBi grown by gas source molecular beam epita...
[期刊论文] 作者:Shu-Xing Zhou,Li-Kun Ai,Ming Qi,An-Huai Xu,Jia-Sheng Yan,Shu-Sen Li,Zhi Jin, 来源:中国物理B(英文版) 年份:2021
Carbon-doped InGaAsBi films on InP∶Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/P...
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