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Heavy ion-induced single event upset sensitivity evaluation of 3D integrated static random access me
[期刊论文] 作者：Xue-Bing Cao,Li-Yi Xiao,Ming-X,
来源：核技术：英文版 年份：2018
Heavy ion-induced single event upsets (SEUs) of static random access memory (SRAM), integrated with three-dimensional integrated circuit technology, are evaluat...
,Heavy ion-induced single event upset sensitivity evaluation of 3D integrated static random access m
[期刊论文] 作者：Xue-Bing Cao,Li-Yi Xiao,Ming-Xue Huo,Tian-Qi Wang,Shan-Shan Liu,Chun-Hua Qi,An-Long Li,Jin-Xiang Wang,
来源：核技术（英文版） 年份：2018
Heavy ion-induced single event upsets (SEUs) of static random access memory(SRAM),integrated with three-dimensional integrated circuit technology, are eval-uate...
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