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[期刊论文] 作者：LIU Caichi,HAO Qiuyan,ZHANG Ji,
来源：北京科技大学学报 年份：2006
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[期刊论文] 作者：SUN Haizhi LIU Caichi HAO Qiuy,
来源：稀有金属：英文版 年份：2006
The effect of oxygen precipitates on minority carrier lifetime and performance of solar cell was studied by means of Fourier Transform Infrared Spectroscopy (FT...
[期刊论文] 作者：Zhao Liwei Liu Caichi Teng Xi,
来源：中国稀土学报：英文版 年份：2006
V defects in GaN layer grown on Si (111) using metalorganic chemical vapor deposition (MOCVD) were investigated by atomic force microscopy (AFM), plan-view tran...
[期刊论文] 作者：Ren Bingyan,Liu Caichi,Hao Qiu,
来源：稀有金属 年份：2004
New types of defects in 15.24 cm diameter and 20.32 cm diameter Czochralski silicon crystals were found after SCI cleaning. Their annealing behavior was studied...
[期刊论文] 作者：Xu Yuesheng,Liu Caichi,Wang Ha,
来源：中国科学E辑（英文版） 年份：2004
Growth of Czochralski (CZ) silicon crystals under the magnetic field induced by a cusp-shaped permanent magnet of NdFeB has been investigated. It is found that...
[期刊论文] 作者：Zhao Liwei,Liu Caichi,Teng Xia,
来源：稀土学报（英文版） 年份：2004
V defects in GaN layer grown on Si (111) using metalorganic chemical vapor deposition (MOCVD) were investigated by atomic force microscopy (AFM), plan-view tran...
[期刊论文] 作者：LIU Caichi,HAO Qiuyan,ZHANG Ji,
来源：稀有金属（英文版） 年份：2004
The morphology and microstructure of flow pattern defects (FPDs) in lightly boron-doped Czochralski-grown silicon (Cz-Si) crystals were investigated using optic...
[期刊论文] 作者：Ren Bingyan,Liu Caichi,Hao Qiuyan,Zhang Zhicheng,Wang Haiyun,
来源：稀有金属(英文版) 年份：2000
New types of defects in 15.24 cm diameter and 20.32 cm diameter Czochralski silicon crystals were found after SCI cleaning. Their annealing behavior was studied...
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