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[期刊论文] 作者：Hong-Chun Tian,Long-Quan Xu,Lin-Fan Zhu,
来源：中国物理B（英文版） 年份：2018
In the electron or x-ray scattering experiment, the measured spectra at larger momentum transfer are dominated by the electric dipole-forbidden transitions, whi...
,Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Gr
[期刊论文] 作者：Xi-xia Tao,Chun-lan Mo,Jun-lin Liu,Jian-li Zhang,Xiao-lan Wang,Xiao-ming Wu,Long-quan Xu,Jie Ding,Guang-xu,
来源：中国物理快报（英文版） 年份：2018
A blue emission originated from InGaN/GaN superlattice (SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells (QWs),revealing...
,The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on S
[期刊论文] 作者：Wei-Jing Qi,Long-Quan Xu,Chun-Lan Mo,Xiao-Lan Wang,Jie Ding,Guang-Xu Wang,Shuan Pan,Jian-Li Zhang,Xiao-Ming,
来源：中国物理快报（英文版） 年份：2017
InGaN-based green light-emitting diodes (LEDs) with different growth temperatures of superlattice grown on Si (111) substrates are investigated by temperature-d...
,Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quant
[期刊论文] 作者：Zhang,Xiao-lan Wang,Zhi-jue Quan,Chang-da Zheng,Xiao-ming Wu,Shuan Pan,Guang-xu Wang,Jie Ding,Long-quan Xu,
来源：中国物理快报（英文版） 年份：2018
Effect of hydrogen (H2) treatment during the GaN barrier growth on the electroluminescence performance of green InGaN/GaN single-quantum-well light-emitting dio...
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