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[期刊论文] 作者：P.Jantawongrit,S.Sanorpim,H.Yaguchi,M.Orihara,P.Limsuwan,,
来源：Journal of Semiconductors 年份：2015
InN film was grown on 4H-SiC(0001) substrate by RF plasma-assisted molecular beam epitaxy(RFMBE).Priorto the growth of InN film,an InN buffer layer with a thick...
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