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[期刊论文] 作者：PaulHill,CharalambosKlitis,BenoitGuilhabert,MarcSorel,ErdanGu,MartinD.Dawson,MichaelJ.Strain,
来源：PhotonicsResearch 年份：2020
High-quality integrated diamond photonic devices have previously been demonstrated in applications from non-linear photonics to on-chip quantum optics. However, the small sample sizes of single crystal material available, and the difficulty......
1 Gbps free-space deep-ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm
[期刊论文] 作者：XiangyuHe,EnyuanXie,MohamedSufyanIslim,ArdimasAndiPurwita,JonathanJ.D.McKendry,ErdanGu,HaraldHaas,MartinD.Dawson,
来源：PhotonicsResearch 年份：2019
The low modulation bandwidth of deep-ultraviolet (UV) light sources is considered as the main reason limiting the data transmission rate of deep-UV communications. Here, we present high-bandwidth III-nitride micro-light-emitting diodes (μL......
[会议论文] 作者：熊畅[1]RobertW.Martin[2]章蓓[1]康香宁[1]代涛[1]张国义[1]IanM.Watson[2]ErdanGu[2]MartinD.Dawson[2]PaulR.Edwards[2],
来源：第十五届全国化合物半导体材料、微波器件和光电器件学术会议 年份：2008
本文报道了一种新的利用侧向湿法腐蚀AlInN牺牲层技术制备GaN微腔的方法。我们采用金属有机化学气相外延(MOCVD)技术在监宝石和自支撑的GaN衬底上生长一层100nm的AlInN牺牲层...
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