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[期刊论文] 作者：ChristianKuhn,LucaSulmoni,MartinGuttmann,JohannesGlaab,NormanSusilo,TimWernicke,MarkusWeyers,MichaelKneissl,
来源：PhotonicsResearch 年份：2019
We report on AlGaN-based tunnel heterojunctions grown by metalorganic vapor phase epitaxy enabling fully transparent UVC LEDs by eliminating the absorbing p-AlGaN and p-GaN layers. Furthermore, the electrical characteristics can be improved......
Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heteroju
[期刊论文] 作者：FrankMehnke,ChristianKuhn,MartinGuttmann,LucaSulmoni,VerenaMontag,JohannesGlaab,TimWernicke,MichaelKneissl,
来源：PhotonicsResearch 年份：2021
We present the growth and electro-optical characteristics of highly transparent AlGaN-based tunnel heterojunction light-emitting diodes (LEDs) emitting at 232 nm entirely grown by metalorganic vapor phase epitaxy (MOVPE). A GaN:Si interlaye......
[期刊论文] 作者：CarloDeSanti,MatteoMeneghini,DesireeMonti,JohannesGlaab,MartinGuttmann,JensRass,SvenEinfeldt,FrankMehnke,
来源：PhotonicsResearch 年份：2017
This paper reports a comprehensive analysis of the origin of the electroluminescence (EL) peaks and of the thermal droop in UV-B AlGaN-based LEDs. By carrying out spectral measurements at several temperatures and currents, (i) we extract in......
Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially latera
[期刊论文] 作者：LeonardoCancellara,CarstenNetzel,NeyshaLoboPloch,ShaojunWu,JensRass,SebastianWalde,LucaSulmoni,MartinGuttmann,
来源：PhotonicsResearch 年份：2020
We report on the performance of AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) emitting at 265 nm grown on stripe-patterned high-temperature annealed (HTA) epitaxially laterally overgrown (ELO) aluminium nitride (AlN)/sapphire......
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