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[期刊论文] 作者：MOHANKUMAR,A,
来源：数学物理学报：B辑英文版 年份：2014
In this paper, we study the existence, uniqueness, continuous dependence, Ulam stabilities and exponential stability of random impulsive semilinear differential...
[会议论文] 作者：Mrudula Govindankutty,Mohankumar K,
来源：第九届国际气象学和大气科学协会科学大会 年份：2005
...
[期刊论文] 作者：Dong Yu,Mohankumar Kurukumbi,D,
来源：神经系统科学与医药(英文) 年份：2018
Rationale: Epilepsy patients are known to have multiple comorbidities. Comorbid psychiatric diagnosis contributes to the poor outcome, especially undiagnosed ps...
[期刊论文] 作者：Mohankumar G.N.,黄定国,,
来源：热带作物译丛 年份：1987
锡兰肉桂树是药用和香料木本植物。本文是关于锡兰肉桂花的特征、开花习性、花粉粒萌发率、授粉方式等的试验研究结果。Ceylon Cinnamon is a medicinal and spice woody p...
[期刊论文] 作者：董海亮,钟志成,R.Rajeswari,Mohankumar,
来源：国外畜牧学：猪与禽 年份：2003
革兰氏阴性细菌可产生内毒素,这种毒素可危害动物健康而对其很难加以防制.本文作者解释了内毒素来自何处以及对其的治疗和预防之所以如此困难的原因....
[期刊论文] 作者：董海亮,钟志成,R.Rajeswari,Mohankumar,
来源：国外畜牧学-猪与禽 年份：2003
革兰氏阴性细菌可产生内毒素,这种毒素可危害动物健康而对其很难加以防制.本文作者解释了内毒素来自何处以及对其的治疗和预防之所以如此困难的原因.rn...
[会议论文] 作者：Babu C Antony,Hareeshkumar PV,Mohankumar N,Neema CP,
来源：第九届国际气象学和大气科学协会科学大会 年份：2005
...
[期刊论文] 作者：Sudhansu Kumar Pati,Hemant Pardeshi,Godwin Raj,N Mohankumar,Chandan Kumar Sarkar,,
来源：Journal of Semiconductors 年份：2013
We propose an analytical model for drain current and inversion charge in the subthreshold region for an underlap DG FinFET by using the minimum channel potentia...
A 2DEG charge density based drain current model for various Al and In molefraction mobility dependen
[期刊论文] 作者：Godwin Raj,Hemant Pardeshi,Sudhansu Kumar Pati,N Mohankumar,Chandan Kumar Sarkar,,
来源：Journal of Semiconductors 年份：2013
We present a two-dimensional electron gas(2DEG) charge-control mobility variation based drain current model for sheet carrier density in the channel.The model w...
[期刊论文] 作者：Sudhansu Kumar Pati,Kalyan Koley,Arka Dutta,N Mohankumar,Chandan Kumar Sarkar,,
来源：Journal of Semiconductors 年份：2013
In analog circuit design an important parameter,from the perspective of superior device performance,is linearity.The DG MOSFET in asymmetric mode operation has...
[期刊论文] 作者：Hemant Pardeshi,Sudhansu Kumar Pati,Godwin Raj,N Mohankumar,Chandan Kumar Sarkar,,
来源：Journal of Semiconductors 年份：2012
We investigate the performance of an 18 nm gate length AlInN/GaN heterostructure underlap double gate MOSFET,using 2D Sentaurus TCAD simulation.The device uses...
[期刊论文] 作者：Stephen Safe,Rupesh Shrestha,Kumaravel Mohankumar,Marcell Howard,Erik Hedrick,Maen Abdelrahim,
来源：世界胃肠病学杂志:英文版 年份：2021
Specificity protein(Sp)transcription factors(TFs)Sp1,Sp3 and Sp4,and the orphan nuclear receptor 4A1(NR4A1)are highly expressed in pancreatic tumors and Sp1 is a negative prognostic factor for pancreatic cancer patient survival.Results of k......
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