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[期刊论文] 作者：WANG Cai-feng NIU Ping-juan GA,
来源：半导体光子学与技术：英文版 年份：2009
With the consideration of the thermal management and heat sink requirements,a cooling device is designed and the thermal resistance of this device is calculated...
[期刊论文] 作者：RONG Xue-juan NIU Ping-juan XU,
来源：半导体光子学与技术：英文版 年份：2009
Studied are the controller design and basic principles of intelligent lighting network. TI’s MSP430F123 is used as a main controller. By using the ZigBee modul...
[期刊论文] 作者：WANG Cai-feng NIU Ping-juan GA,
来源：半导体光子学与技术：英文版 年份：2008
带的连接温度的热管理是基本技术之一让带的灯在许多方面保证基本说明。分析高力量被带是热上的分发水池。用数学统计方法，一个公式是 conlcuded 在带的安全工作温度下面计算...
[期刊论文] 作者：WANG Cai-feng,NIU Ping-juan,GA,
来源：半导体光子学与技术（英文版） 年份：2004
Thermal management of LED junction temperature is one of the fundamental technologies for LED lamp to ensure basic specifications in many aspects. Analysed is t...
[期刊论文] 作者：LI Wei,WANG Wei,NIU Ping-juan,,
来源：半导体光子学与技术：英文版 年份：2009
The dynamic reconfiguration technique based on field-programmable gate array(FPGA) can improve the resource utilization. Discussed are the dynamic reconfigurati...
[期刊论文] 作者：XU Li NIU Ping-juan FU Xian-so,
来源：半导体光子学与技术：英文版 年份：2009
A bandgap voltage reference is designed to meet the requirements of low power loss,low temperature coefficient and high power source rejection ratio(PSRR) in th...
[期刊论文] 作者：DING Ke NIU Ping-juan FU Xian-,
来源：半导体光子学与技术：英文版 年份：2008
当带的力量的质量改善，带的力量的费用减少，半导体点亮将代替白炽、荧光灯逐渐地点亮，在灯光的历史上引起另一条革命。并且它的开车答案极大地被加速了。把带的 I-V 特征和申请......
,The properties of GaMnN films grown by metalorganic chemical vapour deposition using Raman spectros
[期刊论文] 作者：Xing Hai-Ying,Niu Ping-Juan,Xie Yu-Xin,
来源：中国物理B（英文版） 年份：2012
...
[期刊论文] 作者：DING Ke,NIU Ping-juan,FU Xian-song,
来源：城市道桥与防洪 年份：2008
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者：GUO Jian-Bang,LU Ke-Qing,NIU Ping-Juan,YU Li-Yuan,XING Hai-Ying,
来源：中国物理快报（英文版） 年份：2012
We study two families of two-dimensional bright lattice solitons in photovoltaic-photorefractive crystals.It is shown that self-focusing and self-defocusing lat...
,Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Bea
[期刊论文] 作者：WU Shu-Dong,GUO Li-Wei,WANG Wen-Xin,LI Zhi-Hua,NIU Ping-Juan,HUANG Qi,ZHOU Jun-Ming,
来源：中国物理快报（英文版） 年份：2005
The incorporation behaviour of arsenic and phosphorus in the GaAsP teary alloy under phosphorus-rich conditions is studied based on the incorporation coeffcient...
[期刊论文] 作者：Ma Qiao-Yun,Li Yang-Xian,Chen Gui-Feng,Yang Shuai,Liu Li-Li,Niu Ping-Juan,Chen Dong-Feng,Li Hong-Tao,
来源：中国物理（英文版） 年份：2005
Annealing effect of the oxygen precipitation and the induced defects have been investigated on the fast neutron irradiated Czochralski silicon (CZ-Si) by infrar...
[期刊论文] 作者：WANG Wei,HUANG Bei-Ju,DONG Zan,LIU Hai-Jun,ZHANG Xu,GUAN Ning,CHEN Jin,GUO Wei-Lian,NIU Ping-Juan,CHEN,
来源：中国物理快报（英文版） 年份：2010
...
,Properties of InGaP/GaAs Grown by Solid-Source Molecular Beam Epitaxy with a GaP Decomposition Sour
[期刊论文] 作者：SHANG Xun-Zhong(尚勋忠),NIU Ping-Juan(牛萍娟),WU Shu-Dong(吴曙东),WANG Wen-Xin(王文新),GUO Li-Wei(郭丽伟),HUANG Qi(黄绮,
来源：中国物理快报（英文版） 年份：2003
Lattice-matched InGaP on GaAs (001) was successfully grown by solid-source molecular beam epitaxy with a GaP decomposition source. A 0.5-μm-thick InGaP epilaye...
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