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,Room-temperature strong coupling between dipolar plasmon resonance in single gold nanorod and two-d
[期刊论文] 作者：Jinxiu Wen,Hao Wang,Huanjun Chen,Shaozhi Deng,Ningsheng Xu,
来源：中国物理B（英文版） 年份：2018
All-solid-state strong coupling systems with large vacuum Rabi splitting energy have great potential applications in future quantum information technologies,suc...
Controlled Assembly of Layer-by-layer Stacking Continuous Graphene Oxide Films and Its Application f
[会议论文] 作者：Yuan Huang,Juncong She,Wenjie Yang,Shaozhi Deng,Ningsheng Xu,
来源：2013年纳米、表面和Graphene科学与技术全国会议 年份：2013
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Controlled Assembly of Layer-by-layer Stacking Continuous Graphene Oxide Films and Its Application f
[会议论文] 作者：Yuan Huang,Juncong She,Wenjie Yang,Shaozhi Deng,Ningsheng Xu,
来源：2013年纳米、表面和Graphene科学与技术全国会议 年份：2013
A featured "vapor transportation" re-assembly technique was developed to attain layer-by-layer stacking continuous graphene oxide (GO) films on both flat and co...
High-yield Synthesis of Two-dimensional BN Nanosheets for Effective Mechanical Reinforcements of Pol
[期刊论文] 作者：Fei Liu,Luxi Peng,Haibo Gan,Xun Yang,Yan Tian,Jun Chen,Shaozhi Deng,Ningsheng Xu,,
来源：功能材料信息 年份：2016
With the birth of graphene with fasnicating properties,novel two-dimensional nanomaterials have obtained considerable developments in the last decade.Among them...
[会议论文] 作者：Haibo Gan,Luxi Peng,Xun Yang,Yan Tian,Jun Chen,Shaozhi Deng,Ningsheng Xu,Fei Liu,
来源：第十一届中美华人纳米论坛 年份：2016
...
[期刊论文] 作者：Di An,Yan Shen,Jinxiu Wen,Zebo Zheng,Jun Chen,Juncong She,Huanjun Chen,Shaozhi Deng,Ningsheng Xu,,
来源：Nano-Micro Letters 年份：2017
For the first time, Mo nanoscrew was cultivated as a novel non-coinage-metal substrate for surface-enhanced Raman scattering(SERS). It was found that the nanosc...
[会议论文] 作者：Shaozhi DENG,Gongtan LI,Ningsheng XU,Boru YANG,Chuan LIU,Changcheng LO,Chiayu LEE,Chihyuan TSENG,Alan,
来源：2015广东材料发展论坛——新材料与先进制造大会 年份：2015
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[会议论文] 作者：YANG,Chuan LIU,Chiayu LEE,Chihyuan TSENG,Changcheng LO,Alan LIEN,Shaozhi DENG,Hanping D.SHIEH,Ningsheng XU,
来源：2015广东材料发展论坛——新材料与先进制造大会 年份：2015
The threshold voltage shift (△Vth) under positive gate bias stress (PGBS), generally found in amorphous InGaZnO thin film transistors (a-IGZO TFTs),has usually been suppressed by the external passivat...
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