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[期刊论文] 作者:Xu Gao-Bo,Xu Qiu-Xia,Yin Hua-Xiang,Zhou Hua-Jie,Yang Tao,Niu Jie-Bin,Yu Jia-Han, 来源:中国物理B(英文版) 年份:2013
[期刊论文] 作者:FU Di,XIE Dan,ZHANG Chen-Hui,ZHANG Di,NIU Jie-Bin,QIAN He,LIU Li-Tian, 来源:中国物理快报(英文版) 年份:2010
We propose diamond-like carbon(DLC)as the resistance change material for nonvolatile memory applications.Nanoscale DLC films are prepared by filtered cathodic v...
[期刊论文] 作者:HUANG Jie,GUO Tian-Yi,ZHANG Hai-Ying,XU Jing-Bo,FU Xiao-Jun,YANG Hao,NIU Jie-Bin, 来源:中国物理快报(英文版) 年份:2010
A novel PMMA/PMGI/ZEP520 trilayer resist electron beam lithograph(EBL)technology is successfully developed and used to fabricate the 150 nm gate-length In0.7Gao...
[期刊论文] 作者:XU Gao-Bo,XU Qiu-Xia,YIN Hua-Xiang,ZHOU Hua-Jie,YANG Tao,NIU Jie-Bin,HE Xiao-Bin, 来源:中国物理快报(英文版) 年份:2013
We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors (PMOSFETs) with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last proc...
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