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[期刊论文] 作者：XING Zhi-Gang,WANG Jing,PEI Xiao-Jiang,WAN Wei,CHEN Hong,ZHOU Jun-Ming,
来源：中国物理快报(英文版) 年份：2007
By using the special maskless V-grooved c-plane sapphire as the substrate, we previously developed a novel GaN LEO method, or the so-called canti-bridge epitaxy...
,Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Sub
[期刊论文] 作者：PEI Xiao-Jiang,GUO Li-Wei,WANG Xiao-Hui,WANG Yang,JIA Hai-Qiang,CHEN Hong,ZHOU Jun-Ming,
来源：中国物理快报（英文版） 年份：2009
Green InGaN/GaN based light-emitting diodes (LEDs) are fabricated both on planar and wet-etched patteed sapphire substrates by metalorganic vapour phase epitaxy...
[期刊论文] 作者：PEI Xiao-Jiang,GUO Li-Wei,WANG Yang,WANG Xiao-Hui,JIA Hai-Qiang,CHEN Hong,ZHOU Jun-Ming,WANG Li,Tamai,
来源：中国物理快报（英文版） 年份：2008
Temperature-dependent photoluminescence (PL) and time resolved photoluminescence (TRPL) are performed to study the PL characteristics and carrier transfer mecha...
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