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Prospects of gallium nitride double drift region mixed tunneling avalanche transit time diodes for o
[期刊论文] 作者：Pranati Panda,Gananath Dash,,
来源：Journal of Semiconductors 年份：2016
The potential of Ga N as a wide band gap semiconductor is explored for application as double drift region mixed tunneling avalanche transit time(MITATT) diodes...
[期刊论文] 作者：Pranati Panda,Satya Narayana P,
来源：纳米科学与工程(英文) 年份：2014
High frequency properties of 4H-SiC double drift region (DDR) Mixed Tunnelling Avalanche Transit Time (MITATT) diodes are studied through computer simulation me...
[期刊论文] 作者：Deepak K.Karan,Pranati Panda,G.,
来源：Journal of Semiconductors 年份：2020
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[期刊论文] 作者：Deepak K.Karan,Pranati Panda,G. N.Dash,,
来源：Journal of Semiconductors 年份：2013
Noise characteristics of a Read Avalanche diode are analyzed by incorporating the tunneling mechanism of the electron into the avalanche mechanism.Analytical ex...
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