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[会议论文] 作者：YU He,Yu Jian,ZHANG.Qiang,QIAO Da-yong,
来源：中国微米纳米技术学会第十届学术年会暨第一届国际会议(1st International Conference of th 年份：2008
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[会议论文] 作者：YU He,ZHANG.Qiang,QIAO Da-yong,Yu Jian,
来源：中国微米纳米技术学会第十届学术年会暨第一届国际会议(1st International Conference of th 年份：2008
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[会议论文] 作者：YU He,ZHANG Qiang,QIAO Da-yong,Yu Jian,
来源：中国微米纳米技术学会第十届学术年会暨第一届国际会议(1st International Conference of th 年份：2008
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[期刊论文] 作者：Guo Hui,Zhang Yi-Men,Qiao Da-Yong,Sun Lei,Zhang Yu-Ming,
来源：中国物理（英文版） 年份：2007
This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test pattes with NiSi/SiC and NiSi2/SiC...
,Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Ge
[期刊论文] 作者：Guo Hui,Wang Yue-Hu,Zhang Yu-Ming,Qiao Da-Yong,Zhang Yi-Men,
来源：中国物理B（英文版） 年份：2009
By formation of an intermediate semiconductor layer(ISL)with a narrow band gap at the metallic contact/SiCinterface,this paper realises a new method to fabricat...
[期刊论文] 作者：QIAO Da-Yong,YUAN Wei-Zheng,GAO Peng,YAO Xian-Wang,ZANG Bo,ZHANG Lin,GUO Hui,ZHANG Hong-Jian,
来源：中国物理快报（英文版） 年份：2008
A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation.Under illumination of Ni-63 source with an app...
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