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,Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetect
[期刊论文] 作者:Chao Yang,Hongwei Liang,Zhenzhong Zhang,Xiaochuan Xia,Heqiu Zhang,Rensheng Shen,Yingmin Luo,Guotong Du,
来源:中国物理B(英文版) 年份:2019
A solar-blind photodetector is fabricated on single crystal Ga2O3 based on vertical structure Schottky barrier diode.A Cu Schottky contact electrode is prepared...
[会议论文] 作者:Kexiong Zhang,Hongwei Liang,Shiwei Song,Dechao Yang,Rensheng Shen,Yang Liu,Xiaochuan Xia,Yingmin Luo,,
来源:第十七届全国化合物半导体材料微波器件和光电器件学术会议 年份:2012
The stress state and its influence on structural and optical properties of GaN films grown on sapphire and 6H-SiC substrates by metalorganic chemical vapor deposition (MOCVD) were investigated.The E2...
Influence of high-pressure hydrogen treatment on structural and electrical properties of ZnO thin fi
[会议论文] 作者:Chunye Li,Hongwei Liang,Jianze Zhao,Jiming Bian,Yang liu,Rensheng Shen,G.T.Du,Qiuju Feng,Wangcheng Li,
来源:第六届国际氧化锌及相关材料研讨会 年份:2010
...
Influence of high-pressure hydrogen treatment on structural and electrical properties of ZnO thin fi
[会议论文] 作者:Chunye Li,G.T.Du,Hongwei Liang,Jianze Zhao,Qiuju Feng,Jiming Bian,Yang liu,Rensheng Shen,Wangcheng Li,
来源:第六届国际氧化锌及相关材料研讨会 年份:2010
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[会议论文] 作者:Dongsheng Wang,Yingmin Luo,Guotong Du,Wenping Guo,Kexiong Zhang,Hongwei Liang,Shiwei Song,Dechao Yang,Rensheng Shen,
来源:第十七届全国化合物半导体材料微波器件和光电器件学术会议 年份:2012
High-performance 400 nm violet InGaN multi-quantum-wells light-emitting diodes (LED) with p-AlGaN electron blocking layer were fabricated on sapphire substrate by metal organic chemical vapor depositi...
[会议论文] 作者:Hongwei Liang,Yunjie Ke,Rensheng Shen,Shiwei Song,Xiaochuan Xia,Yang Liu,Kexiong Zhang,柯昀洁,梁红伟,申人升,宋世巍,
来源:第十七届全国化合物半导体材料微波器件和光电器件学术会议 年份:2012
在Aixtron 3×2 i近耦合喷淋式金属有机化学气相沉积反应室中,调节喷淋头与基座之间的距离,制备了7,13,18和25mm间距的四个lnGaN/GaN量子阱样品。利用原子力显微镜(AFM)...
[会议论文] 作者:Yunjie Ke,柯昀洁,梁红伟,Hongwei Liang,Rensheng Shen,申人升,Shiwei Song,宋世巍,Xiaochuan Xia,夏晓川,Yang Liu,柳阳,张克雄,Kexiong,
来源:第十七届全国化合物半导体材料微波器件和光电器件学术会议 年份:2012
在Aixtron 3×2 i近耦合喷淋式金属有机化学气相沉积反应室中,调节喷淋头与基座之间的距离,制备了7,13,18和25mm间距的四个lnGaN/GaN量子阱样品。利用原子力显微镜(AFM)、X射线衍射(XRD)对样品表面形貌及界面质量进行了表征。研究表明,随着高度的增加,量子阱的......
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