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Computer Modeling of Inductively Coupled Plasmas: Plasma Chemistry and Feature Profile Simulations f
[会议论文] 作者:S. Tinck,A. Bogaerts,
来源:2011年第三届微电子及等离子体技术国际会议 年份:2011
In this talk,we will explain how to model etching and deposition processes for electronic device fabrication,as applied in Shallow Trench Isolation (STI) and th...
Computer Modeling of Inductively Coupled Plasmas Plasma Chemistry and Feature Profile Simulations fo
[会议论文] 作者:S. Tinck,A. Bogaerts,
来源:2011年第三届微电子及等离子体技术国际会议 年份:2011
In this talk,we will explain how to model etching and deposition processes for electronic device fabrication,as applied in Shallow Trench Isolation (STI) and th...
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