搜索筛选:
搜索耗时4.6179秒,为你在为你在102,285,761篇论文里面共找到 1 篇相符的论文内容
发布年度:
,Properties of InGaP/GaAs Grown by Solid-Source Molecular Beam Epitaxy with a GaP Decomposition Sour
[期刊论文] 作者:SHANG Xun-Zhong(尚勋忠),NIU Ping-Juan(牛萍娟),WU Shu-Dong(吴曙东),WANG Wen-Xin(王文新),GUO Li-Wei(郭丽伟),HUANG Qi(黄绮,
来源:中国物理快报(英文版) 年份:2003
Lattice-matched InGaP on GaAs (001) was successfully grown by solid-source molecular beam epitaxy with a GaP decomposition source. A 0.5-μm-thick InGaP epilaye...
相关搜索: