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,Properties of InGaP/GaAs Grown by Solid-Source Molecular Beam Epitaxy with a GaP Decomposition Sour
[期刊论文] 作者：SHANG Xun-Zhong(尚勋忠),NIU Ping-Juan(牛萍娟),WU Shu-Dong(吴曙东),WANG Wen-Xin(王文新),GUO Li-Wei(郭丽伟),HUANG Qi(黄绮,
来源：中国物理快报（英文版） 年份：2003
Lattice-matched InGaP on GaAs (001) was successfully grown by solid-source molecular beam epitaxy with a GaP decomposition source. A 0.5-μm-thick InGaP epilaye...
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