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High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epi
[期刊论文] 作者：SHU Yong-chun,PI Biao,LIN Yao-,
来源：中国有色金属学会会刊（英文版） 年份：2004
Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy (SSMBE) system. The factors which influence the...
[期刊论文] 作者：JIA Guo-zhi,YAO Jiang-hong,SHU Yong-chun,WANG Zhan-guo,
来源：城市道桥与防洪 年份：2007
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者：ZHANG Guan-jie,SHU Yong-chun,YAO Jiang-hong,SHU Qiang,DENG Hao-liang,JIA Guo-zhi,WANG Zhan-guo,
来源：黑龙江科技信息 年份：2006
本文通过对荣华二采区10...
[期刊论文] 作者：YAO Jiang-Hong,JIA Guo-Zhi,ZHANG Yan,LI Wei-Wu,SHU Yong-Chun,WANG Zhan-Guo,XU Jing-Jun,
来源：中国物理快报（英文版） 年份：2008
A Schr(o)dinger equation is solved numerically for a barrier in a quantum well and a quantum well in another well structure by the transfer matrix technique.Eff...
[期刊论文] 作者：SHU Qiang,LIN Yao-Wang,XING Xiao-Dong,YAO Jiang-Hong,PI Biao,SHU Yong-Chun,WANG Zhan-Guo,XU Jing-Jun,
来源：中国物理快报（英文版） 年份：2006
A GaAs/AlGaAs two-dimensional electron gas (2DEG) structure with the high mobility of μ2K = 1.78 ×106 cm2/Vs has been studied by low-temperature Hall and Shub...
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