搜索筛选:
搜索耗时2.0778秒,为你在为你在102,285,761篇论文里面共找到 49 篇相符的论文内容
发布年度:
[期刊论文] 作者：LIU Bo,SONG Zhi-Tang,FENG Song-Lin,CHEN Bomy,
来源：中国物理快报（英文版） 年份：2004
The effect of annealing temperature on crystallization of amorphous Ge2Sb2 Te5 films with thickness of 40 nm is studied by TEM and AFM methods. The relationship...
[期刊论文] 作者：LIU Bo,SONG Zhi-Tang,FENG Song-Lin,CHEN Bomy,
来源：中国物理快报（英文版） 年份：2005
A single nano-cell-element of chalcogenide-random access memory was fabricated by using the focused ion beam method....
,Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Metho
[期刊论文] 作者：LIU Bo,SONG Zhi-Tang,FENG Song-Lin,CHEN Bomy,
来源：中国物理快报（英文版） 年份：2004
A single cell element of chalcogenide random access memory was fabricated by using the focused ion beam method. The contact size between the Ge2Sb2 Te5 phase ch...
[期刊论文] 作者：SONG Han,WANG Liang-Yong,LIU Wei-Li,SONG Zhi-Tang,
来源：中国物理快报（英文版） 年份：2013
We investigate the effect of cations with different valences on the chemical mechanical polishing (CMP) of silicon dioxide films.The removal rate and surface ro...
,High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscal
[期刊论文] 作者：LV Shi-Long,SONG Zhi-Tang,ZHANG Ting,FENG Song-Lin,
来源：中国物理快报（英文版） 年份：2008
Si16Sb84-based line cell phase change random access memory (PCRAM), in which the Si16Sb84 phase change line is contacted by TiN electrodes with a nanoscale gap,...
,Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by F
[期刊论文] 作者：GONG Yue-Feng,LING Yun,SONG Zhi-Tang,FENG Song-Lin,
来源：中国物理快报（英文版） 年份：2008
A three-dimensional finite element models for phase change random access memory (PCRAM) is established to simulate thermal and electrical behaviours during RESE...
[期刊论文] 作者：WANG Liang-Yong,LIU Bo,SONG Zhi-Tang,FENG Song-Lin,
来源：中国物理快报（英文版） 年份：2009
We examine the effect of cations in solutions containing benzotriazole (BTA) and H2O2 on copper chemical mechanical polishing (CMP). On the base of atomic force...
[期刊论文] 作者：WANG Liang-Yong,ZHANG Kai-Liang,SONG Zhi-Tang,FENG Song-Lin,
来源：中国物理快报（英文版） 年份：2007
We investigate the effect of chemicals on chemical mechanical polishing (CMP) of glass substrates. Ceria slurry in an ultra-low concentration of 0.25wt.% is use...
[期刊论文] 作者：YAN Wei-Xia,ZHANG Ze-Fang,GUO Xiao-Hui,LIU Wei-Li,SONG Zhi-Tang,
来源：中国物理快报（英文版） 年份：2015
...
[期刊论文] 作者：Xu Jia-Qing,Liu Bo,Song Zhi-Tang,Feng Song-Lin,Chen Bomy,
来源：中国物理（英文版） 年份：2006
To investigate the reliability of electrode materials for chalcogenide random access memory (C-RAM) applications, the geometry and time evolution of the worm-li...
,Novel material for nonvolatile ovonic unified memory(OUM)-Ag11In12Te26Sb51 phase change semiconduct
[期刊论文] 作者：Liu Bo,Song Zhi-Tang,Zhang Ting,Feng Song-Lin,Gan Fu-Xi,
来源：中国物理（英文版） 年份：2004
In this paper, Ag11In12Te26Sb51 phase change semiconductor films have been prepared by dc sputtering. The crystallization behaviour of amorphous Ag11In12Te26Sb5...
[期刊论文] 作者：Liu Bo,Song Zhi-Tang,Zhang Ting,Feng Song-Lin,Chen Bomy,
来源：中国物理（英文版） 年份：2004
Ge2Sb2Te5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge2Sb2Te5 thin films was investigated...
[期刊论文] 作者：Yah Wei-Xia,Wang Liang-Yong,Zhang Ze-Fang,Liu Wei-Li,Song Zhi-Tang,
来源：中国物理B（英文版） 年份：2014
...
[期刊论文] 作者：XIA Ji-Lin,LIU Bo,SONG Zhi-Tang,FENG Song-Lin,CHEN Bomy,
来源：中国物理快报（英文版） 年份：2005
Ag-doped Ge2Sb2 Te5 films were deposited by rf magnetron sputtering on SiO2/Si substrates.The content of Ag ranging from 4.5 to 11.3 at.% is determined by induc...
[期刊论文] 作者：XU Cheng,LIU Bo,SONG Zhi-Tang,FENG Song-Lin,CHEN Bomy,
来源：中国物理快报（英文版） 年份：2005
Sn-doped Ge2Sb2 Te5 thin films deposited on Si(100)/SiO2 substrates by rf magnetron sputtering are investigatedby a differential scanning calorimeter, x-ray dif...
[期刊论文] 作者：CAI Dao-Lin,SONG Zhi-Tang,LI Xi,CHEN Hou-Peng,CHEN Xiao-Gang,
来源：中国物理快报（英文版） 年份：2011
...
[期刊论文] 作者：FENG Gao-Ming,SONG Zhi-Tang,LIU Bo,FENG Song-Lin,WAN Xu-Dong,
来源：中国物理快报（英文版） 年份：2008
In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260 nm is fabricated with standard 0.18 μm CMOS proc...
,Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Ty
[期刊论文] 作者：GONG Yue-Feng,SONG Zhi-Tang,LING Yun,LIU Yan,FENG Song-Lin,
来源：中国物理快报(英文版) 年份：2009
...
,Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and
[期刊论文] 作者：GONG Yue-Feng,SONG Zhi-Tang,LING Yun,LIU Yan,LI Yi-Jin,
来源：中国物理快报（英文版） 年份：2010
...
[期刊论文] 作者：ZHONG Min,SONG Zhi-Tang,LIU Bo,FENG Song-Lin,CHEN Bomy,
来源：中国物理快报(英文版) 年份：2008
In order to improve nano-scale phase change memory performance,a super-clean interface should be obtained after chemical mechanical polishing (CMP) of Ge2Sb2Te5...
相关搜索：
