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,Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Burie
[期刊论文] 作者：Jun Luo,Sheng-Lei Zhao,Zhi-Yu Lin,Jin-Cheng Zhang,Xiao-Hua Ma,Yue Hao,
来源：中国物理快报（英文版） 年份：2016
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[期刊论文] 作者：Jun Luo,Sheng-Lei Zhao,Min-Han Mi,Wei-Wei Chen,Bin Hou,Jin-Cheng Zhang,Xiao-Hua Ma,
来源：中国物理B（英文版） 年份：2016
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[期刊论文] 作者：Chun-Xu Su,Wei Wen,Wu-Xiong Fei,Wei Mao,Jia-Jie Chen,Wei-Hang Zhang,Sheng-Lei Zhao,Jin-Cheng Zhang,Yue,
来源：中国物理B（英文版） 年份：2021
The key parameters of vertical A1N Schottky barrier diodes (SBDs) with variable drift layer thickness (DLT) and drift layer concentration (DLC) are investigated...
Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure
[期刊论文] 作者：Ruo-Han Li,Wu-Xiong Fei,Rui Tang,Zhao-Xi Wu,Chao Duan,Tao Zhang,Dan Zhu,Wei-Hang Zhang,Sheng-Lei Zhao,
来源：中国物理B（英文版） 年份：2021
The threshold voltage (Vth) of the p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is inves-tigated via Silvaco-Atlas simulations.The mai...
[期刊论文] 作者：Ying Wang,Yun Jiang,Si-Wei Ji,Shi-Wei Dong,Wei-Wei Chen,Xiao-Hong Tan,Jin-Long Li,Xiao-Jun Li,Sheng-Lei Zhao,
来源：中国物理B（英文版） 年份：2020
A large gate metal height technique is proposed to enhance breakdown voltage in GaN channel and AlGaN channelhigh-electron-mobility-transistors (HEMTs). For GaN...
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