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[期刊论文] 作者:Jin-Ming Shang,Jian Feng,Cheng-Ao Yang,Sheng-Wen Xie,Yi Zhang,Cun-Zhu Tong,Yu Zhang,Zhi-Chuan Niu, 来源:中国物理B(英文版) 年份:2019
The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser (SDL) emitting near 2.0 μm in an exteal...
[期刊论文] 作者:Sheng-Wen Xie,Yu Zhang,Cheng-Ao Yang,Shu-Shan Huang,Ye Yuan,Yi Zhang,Jin-Ming Shang,Fu-Hui Shao,Ying-Qiang, 来源:中国物理B(英文版) 年份:2019
InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb bar-riers of the lasers are grown with digital alloy techn...
[期刊论文] 作者:Yi Zhang,Fu-Hui Shao,Cheng-Ao Yang,Sheng-Wen Xie,Shu-Shan Huang,Ye Yuan,Jin-Ming Shang,Yu Zhang,Ying-Qiang, 来源:中国物理B(英文版) 年份:2018
We report a type-II GaSb-based interband cascade laser operating a continuous wave at room temperature. The cas-cade region of interband cascade laser was desig...
[期刊论文] 作者:Fu-Hui Shao,Yi Zhang,Xiang-Bin Su,Sheng-Wen Xie,Jin-Ming Shang,Yun-Hao Zhao,Chen-Yuan Cai,Ren-Chao Che, 来源:中国物理B(英文版) 年份:2018
We compare the effect of InGaAs/GaAs strained-layer superlattice (SLS) with that of GaAs thick buffer layer (TBL) serving as a dislocation filter layer. The InG...
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