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Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression o
[期刊论文] 作者:Weiyi Li,Zhili Zhang,Kai Fu,Guohao Yu,Xiaodong Zhang,Shichuang Sun,Liang Song,Ronghui Hao,Yaming Fan,,
来源:Journal of Semiconductors 年份:2017
We proposed a novel Al Ga N/Ga N enhancement-mode(E-mode) high electron mobility transistor(HEMT) with a dual-gate structure and carried out the detailed numeri...
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