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[期刊论文] 作者：Ran Cheng,Zhuo Chen,Sicong Yuan,Mitsuru Takenaka,Shinichi Takagi,Genquan Han,Rui Zhang,
来源：半导体学报（英文版） 年份：2021
The performance enhancement of conventional Si MOSFETs through device scaling is becoming increasingly diffi-cult.The application of high mobility channel mater...
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