搜索筛选:
搜索耗时2.3398秒,为你在为你在102,285,761篇论文里面共找到 7 篇相符的论文内容
类      型:
[会议论文] 作者:SunnyXu[1]ShuminWang[2], 来源:2008'北京微电子国际研讨会暨中国半导体行业协会集成电路设计分会年会 年份:2008
Metal CMP,especially Cu/barrier CMP is widely used during semiconductor manufacturing process.To reach both proper removal rate and good dishing and erosion,one of...
[会议论文] 作者:PengWang[1]WenWuPan[1]XiaoyanWu[1]QianGong[2]ShuminWang[3], 来源:2015 Shanghai Thin Film Conference(2015上海薄膜国际会议) 年份:2015
  Integration of Ⅲ-Ⅴ materials on germanium(Ge)substrate,which has been investigated for decades,provides an effective mediation approach for silicon based...
[期刊论文] 作者:XiuLiu,LijuanWang,XuanFang,TaojieZhou,GuohongXiang,BoyuanXiang,XueqingChen,SuikongHark,HaoLiang,ShuminWang, 来源:PhotonicsResearch 年份:2019
Submicron-meter size GaAsBi disk resonators were fabricated with the GaAsBi/GaAs single-quantum-well (QW)-structure grown by molecular beam epitaxy. The GaAsBi/GaAs QW revealed very broad photoluminescence signals in the wavelength range of......
[会议论文] 作者:ZhenpuZhang[1]YuxinSong[2]QimiaoChen[2]XiaoyanWu[2]JuanjuanLiu[2]QianGong[2]ShuminWang[3], 来源:2015 Shanghai Thin Film Conference(2015上海薄膜国际会议) 年份:2015
  Germanium tin(GeSn)is a group Ⅳ alloy with high carder mobility and tunable energy bandgap [1].Theory predicts that the bandgap has a crossover between ind...
[会议论文] 作者:JohanH.vanEs;HansClevers;GustavoLeone;JamesC.Cross;HaibinWang;ShuangZhang;HaruoNakano;DavidG.Simmons;ShuminWang, 来源:2012全国发育生物学大会 年份:2012
  Chorioallantoic branching morphogenesis is a key milestone during placental development, creating the large surface area for nutrient and gas exchange and i...
[会议论文] 作者:JohanH.vanEs;HansClevers;GustavoLeone;HongmeiWang;YanlingWang;BingyanWang;HaibinWang;ShuangZhang;ShuminWang, 来源:2012全国发育生物学大会 年份:2012
  Wnt signaling plays an important role in regulating cell proliferation, survival, differentiation, polarization and migration during embryogenesis and is hi...
[会议论文] 作者:[1]YuxinSong[1]ZhenpuZhang[1]PengWang[1]LiYue[1]JuanjuanLiu[1]PengfeiLu[2]YaoyaoLi[1]QianGong[1]ShuminWang, 来源:2015 Shanghai Thin Film Conference(2015上海薄膜国际会议) 年份:2015
  It has been theoretically predicted that 1.4%biaxial tensile strain can convert Ge,which is compatible with Si CMOS technology,into a direct band-gap semico...
相关搜索: