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Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically
[期刊论文] 作者：JunChen,GuanghanFan,WeiPang,ShuwenZheng,YunyanZhang,
来源：ChineseOpticsLetters 年份：2012
Designs of p-doped in quantum well (QW) barriers and specific number of vertically stacked QWs are proposed to improve the optical performance of GaN-based dual-wavelength light-emitting diodes (LEDs). Emission spectra, carrier concentratio......
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