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A compact charge-based model to study the nanoscale undoped double gate MOSFETs for nanoelectronic c
[期刊论文] 作者：T.Bendib,F.Djeffal,D.Arar,,
来源：Journal of Semiconductors 年份：2013
The analytical modeling of nanoscale devices is an important area of computer-aided design for fast and accurate nanoelectronic design and optimization.In the p...
An optimized junctionless GAA MOSFET design based on multi-objective computation for high-performanc
[期刊论文] 作者：T.Bendib,F.Djeffal,M.Meguellati,,
来源：Journal of Semiconductors 年份：2014
An analytical investigation has been proposed to study the subthreshold behavior of junctionless gates all around(JLGAA) MOSFET for nanoscale CMOS analog applic...
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