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Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applicat
[期刊论文] 作者：D.K.Panda,T.R.Lenka,,
来源：Journal of Semiconductors 年份：2017
An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been...
[期刊论文] 作者：S.R.Routray,T.R.Lenka,
来源：城市道桥与防洪 年份：2017
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable high
[期刊论文] 作者：A.Bhattacharjee,T.R.Lenka,
来源：城市道桥与防洪 年份：2014
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Performance analysis of 20 nm gate-length In_(0:2)Al_(0:8)N/GaN HEMT with Cu-gate having a remarkabl
[期刊论文] 作者：A.Bhattacharjee,T.R.Lenka,,
来源：Journal of Semiconductors 年份：2014
We propose a new structure of InxAl1..xN/GaN high electron mobility transistor(HEMT) with gate length of 20 nm. The threshold voltage of this HEMT is achieved a...
[期刊论文] 作者：R.Singh,T.R.Lenka,R.T.Velpula,,
来源：半导体学报:英文版 年份：2020
In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time...
Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms
[期刊论文] 作者：D.K.Panda,G.Amarnath,T.R.Lenka,
来源：城市道桥与防洪 年份：2018
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Model development for analyzing 2DEG sheet charge density and threshold voltage considering interfac
[期刊论文] 作者：Devashish Pandey,T.R.Lenka,,
来源：Journal of Semiconductors 年份：2014
A model predicting the behavior of various parameters, such as 2DEG sheet charge density and threshold voltage, with the variation of barrier thickness and oxid...
[期刊论文] 作者：T.R.Lenka,G.N.Dash,A.K.Panda,,
来源：Journal of Semiconductors 年份：2013
A new depletion-mode gate recessed AlGaN/InGaN/GaN-high electron mobility transistor(HEMT)with 10 nm thickness of InGaN-channel is proposed.A growth of AlGaN ov...
Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited
[期刊论文] 作者：B.Shougaijam,R.Swain,C.Ngangbam,T.R.Lenka,,
来源：Journal of Semiconductors 年份：2017
The effect of annealing on vertically aligned TiO_2 NWs deposited by glancing angle deposition(GLAD)method on Si substrate using pressed and sintered TiO_2 pell...
[期刊论文] 作者：J.Panda,K.Jena,R.Swain,T.R.Lenka,,
来源：Journal of Semiconductors 年份：2016
We have developed a physics based analytical model for the calculation of threshold voltage, two dimensional electron gas(2DEG) density and surface potential fo...
Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSH
[期刊论文] 作者：Kanjalochan Jena,Raghunandan Swain,T.R.Lenka,
来源：城市道桥与防洪 年份：2015
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHE
[期刊论文] 作者：Kanjalochan Jena,Raghunandan Swain,T.R.Lenka,,
来源：Journal of Semiconductors 年份：2015
A mathematical model is developed predicting the behavior of gate capacitance with the nanoscale variation of barrier thickness in AlN/GaN MOSHEMT and its effec...
[期刊论文] 作者：R.Singh,T.R.Lenka,R.T.Velpula,B.Jain,H.Q.T.Bui,H.P.T.Nguyen,
来源：半导体学报（英文版） 年份：2020
In this paper,drain current transient characteristics of β-Ga2O3 high electron mobility transistor (HEMT) are studied to access current collapse and recovery t...
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