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[期刊论文] 作者:TENG Ran, ZHOU Qigang, DAI Xia,
来源:稀有金属:英文版 年份:2012
In integrated circuit-grade single silicon Czochralski growth,the position and material of heat shield are main parameters affecting the heat exchange and cryst...
[期刊论文] 作者:TENG Ran,ZHOU Qigang,DAI Xiaol,
来源:稀有金属(英文版) 年份:2004
In integrated circuit-grade single silicon Czochralski growth,the position and material of heat shield are main parameters affecting the heat exchange and cryst...
[期刊论文] 作者:TENG Ran,ZHOU Qigang,DAI Xiaolin,WU Zhiqiang,XU Wenting,XIAO Qinghua,WU Xiao,GUO Xi,
来源:稀有金属(英文版) 年份:2012
In integrated circuit-grade single silicon Czochralski growth,the position and material of heat shield are main parameters affecting the heat exchange and cryst...
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