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Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Ir
[期刊论文] 作者:Tetsuji Arai,Kazuki Kamimura,C,
来源:材料科学与化学工程(英文) 年份:2017
We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films increased to above 800?C with...
Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Hea
[期刊论文] 作者:Hiroki Nakaie,Tetsuji Arai,Chi,
来源:材料科学与化学工程(英文) 年份:2017
We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating...
[期刊论文] 作者:Hiroki Nakaie,Tetsuji Arai,Kei,
来源:材料科学与化学工程(英文) 年份:2018
We have developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.0 × 1021 m?3 at a pressure of 30 Pa, a microwa...
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