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[期刊论文] 作者：Tianchun Ye,
来源：微电子制造学报 年份：2018
Over 70 years have passed since the first transistor was invented at Bell Labs,New Jersey,USA on 16 December 1947 by William Shockley,John Bardeen and Walter Br...
The studies of light-trapping properties of nanosized texture and its application to the crystalline
[会议论文] 作者：Rui Jia,Chen Chen,Haofeng Li,Zhi Jin,Xinyu Liu,Tianchun Ye,
来源：UK-China Symposium of New Energy Materials and Nanotechnolog 年份：2012
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The studies of light-trapping properties of nanosized texture and its application to the crystalline
[会议论文] 作者：Rui Jia,Chen Chen,Haofeng Li,Zhi Jin,Xinyu Liu,Tianchun Ye,
来源：UK-China Symposium of New Energy Materials and Nanotechnolog 年份：2012
...
Optimization of electrical characteristics of ALD deposited HfO2 and TiN compatible with gate last p
[会议论文] 作者：Jinjuan Xiang,Kai Han,Tingting Li,Chao Zhao,Wenwu Wang,Junfeng Li,Dapeng Chen,Tianchun Ye,
来源：第一届国际ALD应用大会暨第二届中国ALD学术交流会 年份：2012
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,Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-a
[期刊论文] 作者：Hao Xu,Weichun Luo,Luwei Qi,Shuxiang Zhang,Wenwu Wang,Jiang Yan,Huilong Zhu,Chao Zhao,Dapeng Chen,Tianchun Ye,
来源：中国物理B（英文版） 年份：2017
In the process of high-k films fabrication,a novel multi deposition multi annealing (MDMA) technique is introduced to replace simple post deposition annealing.T...
[会议论文] 作者：Chao Zhao,Tianchun Ye,Huilong Zhu,Huaxiang Yin,Jun Luo,Hong Yang,Chunlong Li,Tao Yang,Hushan Cui,Jianfeng,
来源：2015 Shanghai Thin Film Conference(2015上海薄膜国际会议) 年份：2015
In this talk,processing challenges of CMOS integration of FinFETs with all-last gate stacks and solutions by using novel materials are presented.It is found tha...
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