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[期刊论文] 作者：Tiejun Zhu,
来源：国际计算机前沿大会会议论文集 年份：2018
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[期刊论文] 作者：Tiejun Zhu,
来源：国际计算机前沿大会会议论文集 年份：2017
In China, MOOCs have been widely implemented and deeply applied in the teaching system of Sino-foreign cooperative design majors, and have led a sustained and p...
[会议论文] 作者：Tiejun Zhu,Xinbing Zhao,
来源：无机非金属材料高层论坛暨第7届无机非金属材料专题——先进电子材料研讨会 年份：2015
Half-Heusler(HH) compounds are important high temperature thermoelectric (TE) materials having attracted considerable attention in the recent years.High figure...
[会议论文] 作者：Tiejun Zhu,Chenguang Fu,Xinbing Zhao,
来源：第六届海内外中华青年材料科学技术研讨会暨第十五届全国青年材料科学技术研讨会 年份：2015
Half-Heusler(HH)compounds are important high temperature thermoelectric(TE)materials having attracted considerable attention in the recent years.High figure of merit zT values of 0.8~1.0 have been obt...
[期刊论文] 作者：Tiejun Zhu,Jun Liu,Yue Zheng,M,
来源：国际计算机前沿大会会议论文集 年份：2019
Competition of excellent teachers and talents has increasingly become a key element of global higher education competition at present. The sustainable and effic...
δ-MnO2 Microflowers assembled by Ultrathin Nanosheets Grown on 3D-Graphene: Application for High Per
[会议论文] 作者：Shuangyu Liu,Jian Xie,Gaoshao Cao,Tiejun Zhu,Xinbing Zhao,
来源：中国化学会第十七次全国电化学大会 年份：2013
Microflower structural δ-MnO2 assembled by ultrathin nanosheets grown on three dimentional graphene nanosheets is synthesized for the first time.Herein,high conductive graphene networks (Figure 1a) ma...
[期刊论文] 作者：Huiping Hu,Kaiyang Xia,Yuechu Wang,Chenguang Fu,Tiejun Zhu,Xinbing Zhao,
来源：材料科学技术（英文版） 年份：2021
Cu-and Ag-based superionic conductors are promising thermoelectric materials due to their good elec-trical properties and intrinsically low thermal conductivity.However,the poor electrical and thermal sta-bility restrict their application.I......
[期刊论文] 作者：Min Zhang,Chaoliang Hu,Qi Zhang,Feng Liu,Shen Han,Chenguang Fu,Tiejun Zhu,
来源：中国物理快报（英文版） 年份：2021
It is known that p-type GeTe-based materials show excellent thermoelectric performance due to the favorable electronic band structure.However,n-type doping in GeTe is of challenge owing to the native Ge vacancies and high hole concentration......
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