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,Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-chann
[期刊论文] 作者：Danijel Dankovi′c,Ninoslav Stojadinovi′c,Zoran Priji′c,Ivica Mani′c,Vojkan Davidovi′c,Aneta Priji′c,Sneˇzana,
来源：中国物理B（英文版） 年份：2015
In this study we investigate the dynamic recovery effects in IRF9520 commercial p-channel power vertical double diffused metal–oxide semiconductor field-effect...
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