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[期刊论文] 作者：Wang Shou-Guo(王守国),Zhang Yi-Men(张义门),Zhang Yu-Ming(张玉明),
来源：中国物理（英文版） 年份：2003
Based on the MIS model, a simple method to extract parameters of SiC Schottky diodes is presented using the I-V characteristics. The interface oxide capacitance...
Theoretical investigation of incomplete ionization of dopants in uniform and ion-implanted 4H-SiC ME
[期刊论文] 作者：Wang Shou-Guo(王守国),Zhang Yi-Men(张义门),Zhang Yu-Ming(张玉明),
来源：中国物理（英文版） 年份：2003
The effects of incomplete ionization ofnitrogen in 4H-SiC have been investigated. Poisson’s equation is numerically analysed by considering the effects of Pool...
[期刊论文] 作者：Wang Shou-Guo(王守国),Yang Lin-An(杨林安),Zhang Yi-Men(张义门),Zhang Yu-Ming(张玉明),Zhang Zhi-Yong(张志勇),Yan Jun-Feng,
来源：中国物理（英文版） 年份：2003
This paper describes the fabrication and characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs).SBDs are fabricated by nitrogen ion implantatio...
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