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搜索耗时3.9351秒,为你在为你在102,285,761篇论文里面共找到 4 篇相符的论文内容
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,Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Meta
[期刊论文] 作者：Ru-Dai Quan,Jin-Cheng Zhang,Ya-Chao Zhang,Wei-Hang Zhang,Ze-Yang Ren,Yue Hao,
来源：中国物理快报（英文版） 年份：2016
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,Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistor
[期刊论文] 作者：Li Zhang,Jin-Feng Zhang,Wei-Hang Zhang,Tao Zhang,Lei Xu,Jin-Cheng Zhang,Yue Hao,
来源：中国物理快报（英文版） 年份：2017
Superior characteristics of AlGaN-channel metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) at high temperatures are demonstrated i...
[期刊论文] 作者：Chun-Xu Su,Wei Wen,Wu-Xiong Fei,Wei Mao,Jia-Jie Chen,Wei-Hang Zhang,Sheng-Lei Zhao,Jin-Cheng Zhang,Yue,
来源：中国物理B（英文版） 年份：2021
The key parameters of vertical A1N Schottky barrier diodes (SBDs) with variable drift layer thickness (DLT) and drift layer concentration (DLC) are investigated...
Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure
[期刊论文] 作者：Ruo-Han Li,Wu-Xiong Fei,Rui Tang,Zhao-Xi Wu,Chao Duan,Tao Zhang,Dan Zhu,Wei-Hang Zhang,Sheng-Lei Zhao,
来源：中国物理B（英文版） 年份：2021
The threshold voltage (Vth) of the p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is inves-tigated via Silvaco-Atlas simulations.The mai...
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