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[期刊论文] 作者:JIANG Wei-hua HAN Zhao-jun HAO, 来源:水稻科学:英文版 年份:2005
By means of topical application, fipronil resistance was surveyed in the rice stem borer, Chilo suppressalis, from 12 diferent areas in east China from 2001 to...
[期刊论文] 作者:JIANG Wei-hua,HAN Zhao-jun,HAO, 来源:城市道桥与防洪 年份:2004
By means of topical application, fipronil resistance was surveyed in the rice stem borer, Chilo suppressalis, from 12 diferent areas in east China from 2001 to...
[期刊论文] 作者:Liu-Hong Ma,Wei-Hua Han,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2020
The ionized dopants, working as quantum dots in silicon nanowires, exhibit potential advantages for the development of atomic-scale transistors. We investigate...
[期刊论文] 作者:Ze-Zheng Li,Wei-Hua Han,Zhi-Yong Li, 来源:中国物理B(英文版) 年份:2020
An explanation of optical unitary transformation is presented for general nonoverlapping-image multimode interfer-ence (MMI) couplers with any number of input a...
[期刊论文] 作者:Xiao-Song Zhao,Wei-Hua Han,Yang-Yan Guo,Ya-Mei Dou,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2018
We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from...
[期刊论文] 作者:Yang-Yan Guo,Wei-Hua Han,Xiao-Di Zhang,Jun-Dong Chen,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2022
We investigate the influence of source and drain bias voltages (VDS) on the quantum sub-band transport spectrum in the 10-nm width N-typed j unctionless nanowire transistor at the low temperature of 6 K.We demonstrate that the transverse el......
[期刊论文] 作者:Liu-Hong Ma,Wei-Hua Han,Xiao-Song Zhao,Yang-Yan Guo,Ya-Mei Dou,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2018
We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the...
[期刊论文] 作者:Yang-Yan Guo,Wei-Hua Han,Xiao-Song Zhao,Ya-Mei Dou,Xiao-Di Zhang,Xin-Yu Wu,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2019
We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanow...
[期刊论文] 作者:Ya-Mei Dou,Wei-Hua Han,Yang-Yan Guo,Xiao-Song Zhao,Xiao-Di Zhang,Xin-Yu Wu,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2019
We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanow...
[期刊论文] 作者:Hao Wang,Wei-Hua Han,Xiao-Song Zhao,Wang Zhang,Qi-Feng Lyu,Liu-Hong Ma,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2016
[期刊论文] 作者:Wang Zhang,Wei-Hua Han,Xiao-Song Zhao,Qi-Feng Lv,Xiang-Hai Ji,Tao Yang,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2017
High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate.Hexagonal InAs nanowires are uniformly grown...
[期刊论文] 作者:Liu-Hong Ma,Wei-Hua Han,Hao Wang,Qi-feng Lyu,Wang Zhang,Xiang Yang,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2016
[期刊论文] 作者:Xiao-Di Zhang,Wei-Hua Han,Wen Liu,Xiao-Song Zhao,Yang-Yan Guo,Chong Yang,Jun-Dong Chen,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2019
We investigated single-electron tunneling through single and coupling dopant-induced quantum dots (QDs) in silicon junctionless nanowire transistor (JNT) by var...
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