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[期刊论文] 作者：JIANG Wei-hua HAN Zhao-jun HAO,
来源：水稻科学：英文版 年份：2005
By means of topical application, fipronil resistance was surveyed in the rice stem borer, Chilo suppressalis, from 12 diferent areas in east China from 2001 to...
[期刊论文] 作者：JIANG Wei-hua,HAN Zhao-jun,HAO,
来源：城市道桥与防洪 年份：2004
By means of topical application, fipronil resistance was surveyed in the rice stem borer, Chilo suppressalis, from 12 diferent areas in east China from 2001 to...
,Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless tran
[期刊论文] 作者：Liu-Hong Ma,Wei-Hua Han,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2020
The ionized dopants, working as quantum dots in silicon nanowires, exhibit potential advantages for the development of atomic-scale transistors. We investigate...
,Unitary transformation of general nonoverlapping-image multimode interference couplers with any inp
[期刊论文] 作者：Ze-Zheng Li,Wei-Hua Han,Zhi-Yong Li,
来源：中国物理B（英文版） 年份：2020
An explanation of optical unitary transformation is presented for general nonoverlapping-image multimode interfer-ence (MMI) couplers with any number of input a...
[期刊论文] 作者：Xiao-Song Zhao,Wei-Hua Han,Yang-Yan Guo,Ya-Mei Dou,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2018
We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from...
Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanow
[期刊论文] 作者：Yang-Yan Guo,Wei-Hua Han,Xiao-Di Zhang,Jun-Dong Chen,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2022
We investigate the influence of source and drain bias voltages (VDS) on the quantum sub-band transport spectrum in the 10-nm width N-typed j unctionless nanowire transistor at the low temperature of 6 K.We demonstrate that the transverse el......
,Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowir
[期刊论文] 作者：Liu-Hong Ma,Wei-Hua Han,Xiao-Song Zhao,Yang-Yan Guo,Ya-Mei Dou,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2018
We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the...
,Observation of hopping transitions for delocalized electrons by temperature-dependent conductance i
[期刊论文] 作者：Yang-Yan Guo,Wei-Hua Han,Xiao-Song Zhao,Ya-Mei Dou,Xiao-Di Zhang,Xin-Yu Wu,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2019
We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanow...
,Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire tra
[期刊论文] 作者：Ya-Mei Dou,Wei-Hua Han,Yang-Yan Guo,Xiao-Song Zhao,Xiao-Di Zhang,Xin-Yu Wu,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2019
We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanow...
,Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire t
[期刊论文] 作者：Hao Wang,Wei-Hua Han,Xiao-Song Zhao,Wang Zhang,Qi-Feng Lyu,Liu-Hong Ma,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2016
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[期刊论文] 作者：Wang Zhang,Wei-Hua Han,Xiao-Song Zhao,Qi-Feng Lv,Xiang-Hai Ji,Tao Yang,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2017
High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate.Hexagonal InAs nanowires are uniformly grown...
,Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosec
[期刊论文] 作者：Liu-Hong Ma,Wei-Hua Han,Hao Wang,Qi-feng Lyu,Wang Zhang,Xiang Yang,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2016
...
,Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire
[期刊论文] 作者：Xiao-Di Zhang,Wei-Hua Han,Wen Liu,Xiao-Song Zhao,Yang-Yan Guo,Chong Yang,Jun-Dong Chen,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2019
We investigated single-electron tunneling through single and coupling dopant-induced quantum dots (QDs) in silicon junctionless nanowire transistor (JNT) by var...
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