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[期刊论文] 作者:LI Xiang-Dong,ZHANG Jin-Cheng,ZOU Yu,MA Xue-Zhi,LIU Chang,ZHANG Wei-Hang,WEN Hui-Juan,
来源:中国物理快报(英文版) 年份:2015
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,Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer laye
[期刊论文] 作者:Wen Hui-Juan,Zhang Jin-Cheng,Lu Xiao-Li,Wang Zhi-Zhe,Ha Wei,Ge Sha-Sha,Cao Rong-Tao,
来源:中国物理B(英文版) 年份:2014
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,AlGaN Channel High Electron Mobility Transistors with Ultra-Low Drain-Induced-Barrier-Lowering Coef
[期刊论文] 作者:HA Wei,ZHANG Jin-Cheng,ZHAO Sheng-Lei,GE Sha-Sha,WEN Hui-Juan,ZHANG Chun-Fu,MA Xiao-Hua,
来源:中国物理快报(英文版) 年份:2013
The conventional AlGaN/GaN high electron mobility transistor (HEMT),the AlGaN/GaN/AlGaN HEMT,and the AlxGa1-xN/AlyGa1-yN HEMT are fabricated on sapphire substra...
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