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[会议论文] 作者：X.M. Yang,H.Y.Zhang,C.G.Jin,F.Wang,X.M. Wu,L.J. zhuge,
来源：第十五届全国等离子体科学技术会议 年份：2011
HfSiO(N) films were prepared on Si substrates by using dual ion beam sputtering deposition (DIBSD).Structure and electronic properties of the film with diff...
[会议论文] 作者：X.M. Yang,X.M. Wu,L.J. zhuge,H.Y.Zhang,C.G.Jin,F.Wang,
来源：第十五届全国等离子体科学技术会议 年份：2011
HfSiO(N) films were prepared on Si substrates by using dual ion beam sputtering deposition (DIBSD).Structure and electronic properties of the film with different annealing temperature were investigate...
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